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| BAV300...BAV303 Vishay Telefunken Silicon Epitaxial Planar Diodes Features D D D D Saving space Hermetic sealed parts Fits onto SOD 323 / SOT 23 footprints Electrical data identical with the devices BAV100...BAV103 / BAV200...BAV203 96 12315 Applications General purposes Absolute Maximum Ratings Tj = 25_C Parameter Peak reverse voltage g Test Conditions Type BAV300 BAV301 BAV302 BAV303 BAV300 BAV301 BAV302 BAV303 Symbol VRRM VRRM VRRM VRRM VR VR VR VR IF IFSM IFM Tj Tstg Value 60 120 200 250 50 100 150 200 250 1 625 175 -65...+175 Unit V V V V V V V V mA A mA C C Reverse voltage g Forward current Peak forward surge current Forward peak current Junction temperature Storage temperature range tp=1s, Tj=25C f=50Hz Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions mounted on epoxy-glass hard tissue, Fig. 1 35 l d 09 35mm copper clad, 0.9 mm2 copper area per electrode Symbol RthJA Value 500 Unit K/W Document Number 85545 Rev. 3, 01-Apr-99 www.vishay.de * FaxBack +1-408-970-5600 1 (5) BAV300...BAV303 Vishay Telefunken Electrical Characteristics Tj = 25_C Parameter Forward voltage Reverse current Test Conditions IF=100mA VR=50V VR=100V VR=150V VR=200V Tj=100C, VR= 50V Tj=100C, VR= 100V Tj=100C, VR= 150V Tj=100C, VR= 200V IR=100mA, tp/T=0.01, m tp=0.3ms Type BAV300 BAV301 BAV302 BAV303 BAV300 BAV301 BAV302 BAV303 BAV300 BAV301 BAV302 BAV303 Symbol VF IR IR IR IR IR IR IR IR V(BR) V(BR) V(BR) V(BR) CD rf trr Min Typ Max 1 100 100 100 100 15 15 15 15 Unit V nA nA nA nA mA mA mA mA V V V V pF Breakdown voltage g 60 120 200 250 1.5 5 50 Diode capacitance VR=0, f=1MHz Differential forward resistance IF=10mA Reverse recovery time IF=IR=30mA, iR=3mA, RL=100W W ns Characteristics (Tj = 25_C unless otherwise specified) 1000 IF - Forward Current ( mA ) I R - Reverse Current ( mA ) 100 Scattering Limit 10 1000 Tj = 25C 100 Scattering Limit 10 1 VR = VRRM 0.1 0.01 0 40 80 120 1 0.1 160 200 94 9085 0 0.4 0.8 1.2 1.6 2.0 94 9084 Tj - Junction Temperature ( C ) VF - Forward Voltage ( V ) Figure 1. Reverse Current vs. Junction Temperature Figure 2. Forward Current vs. Forward Voltage www.vishay.de * FaxBack +1-408-970-5600 2 (5) Document Number 85545 Rev. 3, 01-Apr-99 BAV300...BAV303 Vishay Telefunken rf - Differential Forward Resistance (W ) 1000 100 Tj = 25C 10 1 0.1 94 9089 1 10 100 IF - Forward Current ( mA ) Figure 3. Differential Forward Resistance vs. Forward Current 0.71 1.3 1.27 95 10330 Reflow Soldering 1.2 0.152 9.9 25 0.355 0.6 1.2 2.4 0.6 Figure 5. Recommended foot pads (in mm) 10 Wave Soldering 95 10331 2.5 1.4 95 10329 24 0.7 1.4 2.8 0.7 Figure 4. Board for RthJA definition (in mm) Figure 6. Recommended foot pads (in mm) Document Number 85545 Rev. 3, 01-Apr-99 www.vishay.de * FaxBack +1-408-970-5600 3 (5) BAV300...BAV303 Vishay Telefunken Dimensions in mm 96 12072 www.vishay.de * FaxBack +1-408-970-5600 4 (5) Document Number 85545 Rev. 3, 01-Apr-99 BAV300...BAV303 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 85545 Rev. 3, 01-Apr-99 www.vishay.de * FaxBack +1-408-970-5600 5 (5) |
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